N-Channel Sic Power MOSFET
JRM120045W
Features
V(BRDSS
1200 V
Rps(on) MAX
45 mo
ld MAX
624
Typ. RDs(on)= 45 mO
Ultra Low Gate Charge (QG(tot)= 89 nC)
Capacitance (Coss= 137 pF)
ROHS
REACH
100% UIL Tested
Typical Applications
 UPS
.DC/DC Converter
N-CHANNEL MOSFET
Boost Inverter
MAXIMUM RATINGS (T= 25C unless otherwise noted)
Parameter
Drain-to Source Voltage
Gate-to-Source Voltage
Recommended Opera-tion Values of Gate-toSource Voltage
Continuous DrainCurrent Re.c
Power Dissipation ReJc
Continuous DrainCurrent Re.c
Power Dissipation ReJc
Pulsed Drain Current(Note 2)
Tc < 175*C
SteadyState
SteadyState
Tc= 25°C
Tc = 100°C
TA= 25°C
Operating Junction and Storage TemperatureRange
Source Current (Body Diode)
Single Pulse Drain-to-Source AvalancheEnergy (l Lipk) = 42 A, L = 1 mH) (Note 3)
Symbol
VDss
VGs
VGsop
D
PD
o
Po
oN
TJ. Tstg
5
EAS
Value
1200
15/+25
-51+20
62
306
44
153
248
-55 to+175
52
882
Unit
W
A
W
6
C
mJ
0
T0-247-3LD
CASE 340CX
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. if any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUMRATINGS
JRM120045W
Parameter
Junction-to-Case (Note 1)
Symbol
RaC
Value
049
Unit
CW